//#include "at32f421.h"//#include "stm32f10x.h"
//#include "at32f421_conf.h"
#include "syspar.h"
#include "typedefine.h"
#include "user.h"
#include "MosResCalib.h"
//#include "at32f421_wk_config.h"
#include "flash_master.h"
#include "string.h"
MOSINSIDE_Struct MosResInside;
MOSCALIB_Struct MosCal_A;
MOSCALIB_Struct MosCal_B;
MOSCALIB_Struct MosCal_C;

extern void delay_125us(int count);

const phasePWM_Struct  MosPhasePWM[4]=
{
 {HW_HHPWM_PERIOD,HW_HHPWM_PERIOD,HW_HHPWM_PERIOD},
 {HW_HPWM_PERIOD,0,0}, //A下，B上，C上
  {0,HW_HPWM_PERIOD,0}, //A上，B下，C上
  {0,0,HW_HPWM_PERIOD}, //A上，B上，C下


};
//--------上电初始化，获取flash内阻值

void MosResRead(void)
{
    CalcMaXAdcCur(&MosCal_A); //求出最大相电流值
    CalcMaXAdcCur(&MosCal_B);
    CalcMaXAdcCur(&MosCal_C);

   // CalcTempRes(&EepromMosPara, adc_stUpOut.PCBTemp);//获取电阻值
    MosResInside.blCalibFault=FALSE;

    MosResInside.blCalibFlag=FALSE;
}


//----接收指令和校准系数

void ReceiveCmdHandle(void)
{
  // static UWORD ADCcalCnt=0;
   SWORD *p;
   EEP_RES_Struct *EEp;
   MOSCALIB_Struct *Temp;
   ADC_SUMCOF  *ADCtemp;
 if(MosResInside.blCalibFlag==TRUE)
 {

  for(char moscnt=1;moscnt<=3;moscnt++)
 //  char   moscnt=3;
 {

//     tmr_output_enable(TMR1,FALSE);//OEN 涓昏緭鍑轰娇鑳� //MOE
//     dma_channel_enable(DMA1_CHANNEL5,FALSE);
    // delay_125us(1);
      pwm_stGenOut.uwNewTIM1COMPR[0] = MosPhasePWM[moscnt].PWM1;
      pwm_stGenOut.uwNewTIM1COMPR[1] = MosPhasePWM[moscnt].PWM2;
      pwm_stGenOut.uwNewTIM1COMPR[2] = MosPhasePWM[moscnt].PWM3;
      pwm_stGenOut.uwNewTIM1COMPR[3] = MosPhasePWM[moscnt].PWM1;
      pwm_stGenOut.uwNewTIM1COMPR[4] = MosPhasePWM[moscnt].PWM2;//
      pwm_stGenOut.uwNewTIM1COMPR[5] = MosPhasePWM[moscnt].PWM3;//
       /* PWM on */
      hw_voPWMOn();
//      tmr_output_enable(TMR1,TRUE);//OEN 主输出使能 //MOE
//      dma_channel_enable(DMA1_CHANNEL5,TRUE);
      delay_125us(delay_time);
      if(moscnt==1)
      {
       Temp= &MosCal_A;
       p=&adc_stDownOut.swIaPu;
       ADCtemp=&adc_LibSUMA;
       EEp= &Syspara2.EepromMosPara.EEP_MOSA;
        
      }
      else if(moscnt==2)
      {
        Temp=& MosCal_B;
        p=&adc_stDownOut.swIbPu;
        ADCtemp=&adc_LibSUMB;
        EEp= &Syspara2.EepromMosPara.EEP_MOSB;
        
      }
      else if(moscnt==3)
      {
        Temp= &MosCal_C;
        p=&adc_stDownOut.swIcPu;
        ADCtemp=&adc_LibSUMC;
        EEp= &Syspara2.EepromMosPara.EEP_MOSC;
      }
      for(int i=0;i<50;i++)
        {

          Temp->uwMOS_i_Value=-(*p);//-adc_stDownOut.swIaPu;
         // Temp->MOS_i_ValueCOM[i]=Temp->uwMOS_i_Value;

          Temp->uwCalRes_i_Value=adc_stUpOut.uwIbusAvgPu;
         // Temp->Res_i_ValueCOM[i]=Temp->uwCalRes_i_Value;
           if((Temp->uwCalRes_i_Value< LIBCURMIN)||(Temp->uwCalRes_i_Value>LIBCURMAX))
          {
              MosResInside.blCalibFault=TRUE;
              break;
          }
         // MosCal_A.RES.swTEMP=adc_stUpOut.PCBTemp;//
          pwm_stGenOut.blSampleCalibFlag = TRUE;
          MosResHandle(Temp,ADCtemp);

         // *EEp=Temp->RES.uwTEMP_RES1; //25度电阻值
          delay_125us(1);
           //GPIOB->odt  ^= GPIO_PINS_10;
          if(ADCtemp->uwCalibcomplete==TRUE)
          {
              CalcTempRes( Temp,&Syspara2.EepromMosPara);//获取电阻值
              memcpy(EEp, &Temp->RES, sizeof(EEP_RES_Struct));
              break;
         }


        }

      hw_voPWMOff();
      delay_125us(100);
 }
     MosResInside.blCalibFlag=FALSE;
     if( MosResInside.blCalibFault==FALSE)
     {
//         flash_voSysParaWrite();// flash_voMosResParaWrite();
     }
      NVIC_SystemReset(); //复位
 }

}

//---处理读到的ADC值，计算MOS内阻,
void MosResHandle(MOSCALIB_Struct *moscal,ADC_SUMCOF *K)
{

  K->GainTemp = (SLONG)((SLONG)moscal->uwMOS_i_Value<< 10) / (SLONG)moscal->uwCalRes_i_Value; //系数

  adc_voSRCalibration(&adc_stCof , K);//系数求平均
  if( K->uwCalibcomplete!=0)
   {
    moscal->RES.uwTEMP_libres=K->uwCalibcoef* RMOSOFFSETVLAUE >>10; //当前温度MOS电阻值
    moscal->RES.swTEMP=adc_stUpOut.PCBTemp; // 当前温度值
   }


}
//---温度补偿处理读到的ADC值，计算MOS内阻,



void CalcTempRes(MOSCALIB_Struct *y,MOSEEPROM_Struct *Eep)//校准时调用
{
    //R0=50Y/（50+（K50-1）*x）
    y->RES.uwTEMP_RES0 = (UWORD)((SLONG)y->RES.uwTEMP_libres*50 /(50 +(SLONG)(Eep->EEP_K50-1000)*y->RES.swTEMP/1000));//0
    y->RES.uwTEMP_RES2 =(UWORD)((SLONG)Eep->EEP_K50 *y->RES.uwTEMP_RES0/1000);//50
    y->RES.uwTEMP_RES3 =(UWORD)((SLONG)Eep->EEP_K75 *y->RES.uwTEMP_RES0/1000);//75
    y->RES.uwTEMP_RES4 =(UWORD)((SLONG)Eep->EEP_K100 *y->RES.uwTEMP_RES0/1000);//100
    y->RES.uwTEMP_RES5 =(UWORD)((SLONG)Eep->EEP_K125 *y->RES.uwTEMP_RES0/1000);//125
    y->RES.uwTEMP_RES6 =(UWORD)((SLONG)Eep->EEP_K150 *y->RES.uwTEMP_RES0/1000);//150
    y->RES.uwTEMP_RES1 =y->RES.uwTEMP_RES0 +((y->RES.uwTEMP_RES2-y->RES.uwTEMP_RES0)>>1);//25
}

void CalcResVaule(MOSCALIB_Struct *y , SWORD Temp)//@200ms调用
{

if(Temp<=0)
{
    y->uwCalib_R_Value=y->RES.uwTEMP_RES0 ;

}
else if(Temp<=50)
{
    y->uwCalib_R_Value=(UWORD)(y->RES.uwTEMP_RES0 + (ULONG)(y->RES.uwTEMP_RES2-y->RES.uwTEMP_RES0)*(Temp)/50);

}
else if(Temp<=75)
{
    y->uwCalib_R_Value=(UWORD)(y->RES.uwTEMP_RES2 + (ULONG)(y->RES.uwTEMP_RES3-y->RES.uwTEMP_RES2)*(Temp-50)/25);

}
else if(Temp<=100)
{
    y->uwCalib_R_Value=(UWORD)(y->RES.uwTEMP_RES3 +(ULONG)(y->RES.uwTEMP_RES4-y->RES.uwTEMP_RES3)*(Temp-75)/25);

}
else if(Temp<=125)
{
    y->uwCalib_R_Value=(UWORD)(y->RES.uwTEMP_RES4 +(ULONG)(y->RES.uwTEMP_RES5-y->RES.uwTEMP_RES4)*(Temp-100)/25);

}
else if(Temp<=150)
{
    y->uwCalib_R_Value=(UWORD)(y->RES.uwTEMP_RES5 +(ULONG)(y->RES.uwTEMP_RES6-y->RES.uwTEMP_RES5)*(Temp-125)/25);

}
else
{
    y->uwCalib_R_Value=y->RES.uwTEMP_RES6 ;

}

 y->uwCurReg2Pu = (UWORD)((SLONG)y->uwCurRegPu_25d *(SLONG)y->RES.uwTEMP_RES1/y->uwCalib_R_Value  );

}


void CalcMaXAdcCur(MOSCALIB_Struct *y)//上电初始化调用
{

    y->uwMaxiPhoseCurAp = (ULONG)(MAXCURCOF *1000)/ y->RES.uwTEMP_RES1; //25度的最大相电流
    y->uwCurReg2Pu= ((UQWORD)y->uwMaxiPhoseCurAp << 24) / (1 << (ADC_RESOLUTION_BIT - 1)) / IBASE; // Q24
    y->uwCurRegPu_25d=y->uwCurReg2Pu;

}