#include "eeprom_flash.h"
#include "enviolo_can.h"

const uint8_t EEPROM_Flash_Flag[4] = {0x55,0xAA,0x55,0xAA};

FLASH_EraseInitTypeDef EEPROM_AreaEraseInitStruct;
TrueOrFalse_Flag_Struct_t IsPowerOffDataBkp_SaveFlag = FALSE;
TrueOrFalse_Flag_Struct_t IsFlashSaveDataUpdate = FALSE;

/****************************局部变量定义******************************/
uint8_t Flash_ReadDataBuf[256];
uint32_t Flash_WriteDataBuf[256];

/****************************全局函数定义******************************/
//数据写入
void CopyDataToEEPROM_Flash(void)
{
	uint32_t Temp_32[2];
	//Flash页擦除
	EEPROM_Flash_Erase(EEPROM_FLASH_BEGIN_ADDRESS, EEPROM_FLASH_END_ADDRESS);//约102ms
	
	//写入型号
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_MODE, (uint8_t*)MC_VerInfo.Mode, 16);
	//写入序列号
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_SN, (uint8_t*)MC_VerInfo.SN_Num, 16);
	//写入生产信息
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_MAC_INFO, (uint8_t*)MC_MacInfo.Manufacturer, 32);
	//写入自定义字符串1
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO1, (uint8_t*)UserString1, 16);
	//写入自定义字符串2
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO2, (uint8_t*)UserString2, 16);
	//写入自定义字符串3
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO3, (uint8_t*)UserString3, 16);
	//写入自动变速器控制参数
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_GEARBOX_PARAMS, (uint8_t*)&GearBox_OBC_SetParams.GearNum, 8);
	//写入电池放电曲线参数
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_BATTERY_PARMAS, (uint8_t*)&BatteryCellInfo.DesignCap, sizeof(BatterCellInfo_Struct_t));
	//写入产品标签信息
	SaveDataToEEPROM_Flash(EEPROM_FLASH_ADDR_TAG_INFO, (uint8_t*)MC_TagInfo, 32);		

	//写入标志
	Temp_32[0] = (EEPROM_Flash_Flag[0] << 24) + (EEPROM_Flash_Flag[1] << 16) + (EEPROM_Flash_Flag[2] << 8) + EEPROM_Flash_Flag[3];
	Temp_32[1] = CRC32_Calculate((uint8_t*)EEPROM_Flash_Flag, 4);
	FLASH_Write(EEPROM_FLASH_ADDR_FLAG, Temp_32, 2);
}

//数据读取
void CopyDataFromEEPROM_Flash(void)
{
	int8_t Error_OK; 
	
	//读取型号
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_MODE, Flash_ReadDataBuf, 16);
	if(Error_OK == 0)
	{
	  memcpy(MC_VerInfo.Mode, Flash_ReadDataBuf, 16);
	}
	//读取序列号
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_SN, Flash_ReadDataBuf, 16);
	if(Error_OK == 0)
	{
	  memcpy(MC_VerInfo.SN_Num, Flash_ReadDataBuf, 16);
	}
	//读取生产信息
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_MAC_INFO, Flash_ReadDataBuf, 32);
	if(Error_OK == 0)
	{
	  memcpy(MC_MacInfo.Manufacturer, Flash_ReadDataBuf, 32);
	}
	//读取自定义字符串1
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO1, Flash_ReadDataBuf, 16);
	if(Error_OK == 0)
	{
	  memcpy(&UserString1, Flash_ReadDataBuf, 16);
	}	
	//读取自定义字符串2
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO2, Flash_ReadDataBuf, 16);
	if(Error_OK == 0)
	{
  	memcpy(&UserString2, Flash_ReadDataBuf, 16);
	}
	//读取自定义字符串3
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_USER_INFO3, Flash_ReadDataBuf, 16);
	if(Error_OK == 0)
	{
	  memcpy(&UserString3, Flash_ReadDataBuf, 16);
	}	
	//读取自动变速器控制参数
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_GEARBOX_PARAMS, Flash_ReadDataBuf, 8);
	if(Error_OK == 0)
	{
	   memcpy((uint8_t*)&GearBox_OBC_SetParams.GearNum, Flash_ReadDataBuf, 8);
	}
	//读取电池放电曲线参数
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_BATTERY_PARMAS, Flash_ReadDataBuf, sizeof(BatterCellInfo_Struct_t));
	if(Error_OK == 0)
	{
	   memcpy((uint8_t*)&BatteryCellInfo.DesignCap, Flash_ReadDataBuf, sizeof(BatterCellInfo_Struct_t));
	}
	//读取产品标签信息
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_TAG_INFO, Flash_ReadDataBuf, 32);
	if(Error_OK == 0)
	{
	   memcpy(&MC_TagInfo, Flash_ReadDataBuf, 32);
	}
	
}

//指定地址写入指定长度数据类型为32bit数据
void FLASH_Write(uint32_t FlashAddress, uint32_t* Data, uint16_t DataLength)
{
  uint32_t i = 0;
	
  HAL_FLASH_Unlock();

  for (i = 0; (i < DataLength) && (FlashAddress <= (EEPROM_FLASH_END_ADDRESS-4)); i++)
  {    
    if (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, FlashAddress, *(uint32_t*)(Data + i)) == HAL_OK)      
    {
      FlashAddress += 4;
    }
    else
    {
      // Error occurred while writing data in Flash memory
			HAL_FLASH_Lock();
      return;
    }
  }

  HAL_FLASH_Lock();

  return;
}

//擦除数据
void EEPROM_Flash_Erase(uint32_t BeginAddress, uint32_t EndAddress)
{
	uint32_t PageError;
	
	EEPROM_AreaEraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;
	EEPROM_AreaEraseInitStruct.PageAddress = BeginAddress;
	EEPROM_AreaEraseInitStruct.NbPages = (EndAddress - BeginAddress + 1) / 1024;
	
	HAL_FLASH_Unlock();	
	__HAL_FLASH_CLEAR_FLAG(FLASH_FLAG_EOP | FLASH_FLAG_PGERR | FLASH_FLAG_WRPERR);
	HAL_FLASHEx_Erase(&EEPROM_AreaEraseInitStruct, &PageError);		
	HAL_FLASH_Lock();	
	HAL_Delay(100);
}

//指定地址读取指定长度数据类型为8bit数据
int8_t ReadDataFromEEPROM_Flash(uint32_t FlashAddress, uint8_t* Data, uint8_t Length) // Length必须为4的倍数
{
  uint32_t DataTemp32, CRC_Data, CRC_Result;
	uint8_t i;
	
	Length = Length >> 2;//按照32bit读取
  for(i=0; i<Length; i++)
	{
	  DataTemp32 = *(__IO uint32_t*)(FlashAddress + i * 4);
		Flash_ReadDataBuf[4 * i] = (uint8_t)((DataTemp32 >> 24) & 0xFF);
		Flash_ReadDataBuf[4 * i + 1] = (uint8_t)((DataTemp32 >> 16) & 0xFF);
		Flash_ReadDataBuf[4 * i + 2] = (uint8_t)((DataTemp32 >> 8) & 0xFF);
		Flash_ReadDataBuf[4 * i + 3] = (uint8_t)(DataTemp32 & 0xFF);
	}
	CRC_Data = *(__IO uint32_t*)(FlashAddress + Length * 4);
	CRC_Result = CRC32_Calculate(Flash_ReadDataBuf, i * 4);
	
	if((CRC_Data - CRC_Result) == 0)
	{
    memcpy(Data, Flash_ReadDataBuf, Length * 4);	
		return 0;
	}
	else
	{
	  return -1;
	}
}

//指定地址写入指定长度数据类型为8bit数据，并写入crc校验码
void SaveDataToEEPROM_Flash(uint32_t FlashAddress, uint8_t* Data, uint8_t Length) // Length必须为4的倍数
{
	uint32_t CRC_Result;
	uint8_t PakageNum, i;
	
	PakageNum = Length / 4;
	//数据组包成32bit，最后一包存储CRC校验结果
	for(i=0; i<PakageNum; i++)
  {
	   Flash_WriteDataBuf[i] = (Data[4 * i + 0] << 24) + (Data[4 * i + 1] << 16) + (Data[4 * i + 2] << 8) + Data[4 * i + 3];
	}
	CRC_Result = CRC32_Calculate(Data, Length);
  Flash_WriteDataBuf[PakageNum] = CRC_Result;
	
	//存储数据
	FLASH_Write(FlashAddress, Flash_WriteDataBuf, PakageNum + 1);
}

void EEPROM_Flash_Check(void)
{
  uint8_t DataBuf[4];
	uint32_t Flag, FlagCrc, FlagResult;
	
	//读标志位
	Flag = *(__IO uint32_t*)(EEPROM_FLASH_ADDR_FLAG);
	//读校验位
	FlagCrc = *(__IO uint32_t*)(EEPROM_FLASH_ADDR_FLAG + 4);
	
	DataBuf[0] = Flag >> 24;
	DataBuf[1] = Flag >> 16;
	DataBuf[2] = Flag >> 8;
	DataBuf[3] = Flag & 0xFF;
	
	FlagResult = CRC32_Calculate(DataBuf, 4);
	
	//判断数据是否有效
	if((FlagResult - FlagCrc) == 0) //数据有效
	{
	  CopyDataFromEEPROM_Flash();
	}
	else //数据无效，写入默认参数
	{
		CopyDataToEEPROM_Flash();
	}
}

void EEPROM_Flash_DataUpdate(TrueOrFalse_Flag_Struct_t* IsUpdateFlag)
{
  if(*IsUpdateFlag == TRUE)
	{
	  CopyDataToEEPROM_Flash();
		*IsUpdateFlag = FALSE;
	}
}

TrueOrFalse_Flag_Struct_t EEPROM_Flash_TempCheck(void)
{
	int8_t Error_OK;
	
	//读取掉电临时保存的数据
	Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_POWEROFF_BKP_FLAG, Flash_ReadDataBuf, 4);
	if(Error_OK == 0)
	{
	  if(strncmp("FLAG", (char*)Flash_ReadDataBuf, 4) == 0) //关机前进行过存储
		{
			Error_OK = ReadDataFromEEPROM_Flash(EEPROM_FLASH_ADDR_POWEROFF_BKP, Flash_ReadDataBuf, 40);
			if(Error_OK == 0)
			{
				memcpy((uint8_t*)&MC_PowerOffBkp.ODO_Km, Flash_ReadDataBuf, 40);
				return TRUE;
			}	
		}
	}
	return FALSE;
}